STMicroelectronics STGW40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal 10 units (supplied in a tube)*

SGD128.80

(exc. GST)

SGD140.40

(inc. GST)

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Units
Per unit
10 - 49SGD12.88
50 - 199SGD11.07
200 - 599SGD9.84
600 +SGD9.23

*price indicative

Packaging Options:
RS Stock No.:
906-2818P
Mfr. Part No.:
STGW40S120DF3
Manufacturer:
STMicroelectronics
COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.