STMicroelectronics STGB18N40LZT4, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface

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Subtotal (1 tape of 5 units)*

SGD17.53

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SGD19.11

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5 - 20SGD3.506SGD17.53
25 - 45SGD3.384SGD16.92
50 - 245SGD3.262SGD16.31
250 - 495SGD3.122SGD15.61
500 +SGD3.00SGD15.00

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Packaging Options:
RS Stock No.:
810-3485
Mfr. Part No.:
STGB18N40LZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

420V

Maximum Power Dissipation Pd

150W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Gate Emitter Voltage VGEO

16 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.35 mm

Length

10.4mm

Series

Automotive Grade

Height

4.6mm

Automotive Standard

AEC-Q101

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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