STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

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SGD15.53

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SGD16.93

(inc. GST)

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5 - 20SGD3.106SGD15.53
25 - 45SGD2.998SGD14.99
50 - 245SGD2.89SGD14.45
250 - 495SGD2.766SGD13.83
500 +SGD2.658SGD13.29

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Packaging Options:
RS Stock No.:
810-3485
Mfr. Part No.:
STGB18N40LZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

420 V

Maximum Gate Emitter Voltage

16V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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