Infineon IKZA75N65SS5XKSA1 Hybrid Discrete Diode, 75 A 650 V, 4-Pin PG-TO247-4-3, Through Hole
- RS Stock No.:
- 273-2994
- Mfr. Part No.:
- IKZA75N65SS5XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 unit)*
SGD16.68
(exc. GST)
SGD18.18
(inc. GST)
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In Stock
- 25 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 4 | SGD16.68 |
| 5 - 9 | SGD16.18 |
| 10 - 24 | SGD15.53 |
| 25 - 49 | SGD14.76 |
| 50 + | SGD13.87 |
*price indicative
- RS Stock No.:
- 273-2994
- Mfr. Part No.:
- IKZA75N65SS5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | Hybrid Discrete Diode | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 395W | |
| Number of Transistors | 2 | |
| Package Type | PG-TO247-4-3 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.9mm | |
| Height | 4.9mm | |
| Width | 15.7 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type Hybrid Discrete Diode | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 395W | ||
Number of Transistors 2 | ||
Package Type PG-TO247-4-3 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.9mm | ||
Height 4.9mm | ||
Width 15.7 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IGBT discrete with silicon carbide schottky diode has ultra low switching losses due to the combination of TRENCHSTOP 5 and CoolSiC diode technology as well as the kelvin emitter package.
Highest efficiency
Reduced cooling effort
Increased power density