Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7

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SGD6.90

(exc. GST)

SGD7.52

(inc. GST)

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1 - 9SGD6.90
10 - 99SGD6.25
100 - 249SGD5.84
250 - 499SGD5.18
500 +SGD4.86

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Packaging Options:
RS Stock No.:
258-3757
Mfr. Part No.:
IMBG120R350M1HXTMA1
Manufacturer:
Infineon
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Brand

Infineon

Package Type

PG-TO263-7

The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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