Specifications

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Legislation and Compliance

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Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Number of Transistors	2
	Maximum Power Dissipation Pd	69W
	Package Type	Q0BOOST - Case 180AJ
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Height	13.9mm
	Length	55.2mm
	Width	32.8 mm
	Series	NXH80B120MNQ0SNG
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Number of Transistors 2
	Maximum Power Dissipation Pd 69W
	Package Type Q0BOOST - Case 180AJ
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Height 13.9mm
	Length 55.2mm
	Width 32.8 mm
	Series NXH80B120MNQ0SNG
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NXH80B120MNQ0SNG

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and anti parallel Diodes

Low Inductive Layout Solderable Pins Thermistor

These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ, Surface

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

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