onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ, Surface
- RS Stock No.:
- 245-6991
- Mfr. Part No.:
- NXH80B120MNQ0SNG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD127.08
(exc. GST)
SGD138.52
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 1 | SGD127.08 |
| 2 - 3 | SGD124.45 |
| 4 - 7 | SGD121.82 |
| 8 - 11 | SGD119.19 |
| 12 + | SGD116.56 |
*price indicative
- RS Stock No.:
- 245-6991
- Mfr. Part No.:
- NXH80B120MNQ0SNG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 69W | |
| Package Type | Q0BOOST - Case 180AJ | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 13.9mm | |
| Length | 55.2mm | |
| Width | 32.8 mm | |
| Series | NXH80B120MNQ0SNG | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 69W | ||
Package Type Q0BOOST - Case 180AJ | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 13.9mm | ||
Length 55.2mm | ||
Width 32.8 mm | ||
Series NXH80B120MNQ0SNG | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
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