onsemi NXH100B120H3Q0PTG, Type N-Channel IGBT Module, 50 A 1200 V, 22-Pin Q0BOOST, Surface

RS Stock No.:: 195-8769
Mfr. Part No.:: NXH100B120H3Q0PTG
Manufacturer:: onsemi

onsemi NXH100B120H3Q0PTG, Type N-Channel IGBT Module, 50 A 1200 V, 22-Pin Q0BOOST, Surface

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

SGD85.80

(exc. GST)

SGD93.52

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit
1 - 1	SGD85.80
2 - 5	SGD80.33
6 - 11	SGD75.64
12 - 19	SGD71.58
20 +	SGD67.99

*price indicative

RS Stock No.:: 195-8769
Mfr. Part No.:: NXH100B120H3Q0PTG
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	50A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	2
	Maximum Power Dissipation Pd	186W
	Package Type	Q0BOOST
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	22
	Minimum Operating Temperature	150°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.3V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	-40°C
	Length	66.2mm
	Series	NXH100B120H3Q0
	Standards/Approvals	No
	Width	32.8 mm
	Height	11.9mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 50A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 2
	Maximum Power Dissipation Pd 186W
	Package Type Q0BOOST
	Mount Type Surface
	Channel Type Type N
	Pin Count 22
	Minimum Operating Temperature 150°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature -40°C
	Length 66.2mm
	Series NXH100B120H3Q0
	Standards/Approvals No
	Width 32.8 mm
	Height 11.9mm
	Automotive Standard No

Datasheet NXH100B120H3Q0PTG

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ

Fast IGBT with low VCE(SAT) for high efficiency

25 A / 1600 V Bypass and Anti−parallel Diodes

Low VF bypass diodes for excellent efficiency in bypass mode

SiC Rectifier Specification: VF = 1.44 V

SiC Diode for high speed switching

Solder pin and press-fit pin options available

Flexible mounting

Applications

MPPT Boost Stage

Battery Charger Boost Stage

onsemi NXH100B120H3Q0PTG, Type N-Channel IGBT Module, 50 A 1200 V, 22-Pin Q0BOOST, Surface

Related links