onsemi IGBT Module 1000 V Q2PACK, Surface
- RS Stock No.:
- 245-6973
- Mfr. Part No.:
- NXH350N100H4Q2F2P1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 36 units)*
SGD9,313.092
(exc. GST)
SGD10,151.28
(inc. GST)
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Temporarily out of stock
- Shipping from 03 July 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 36 - 36 | SGD258.697 | SGD9,313.09 |
| 72 - 72 | SGD258.316 | SGD9,299.38 |
| 108 + | SGD257.936 | SGD9,285.70 |
*price indicative
- RS Stock No.:
- 245-6973
- Mfr. Part No.:
- NXH350N100H4Q2F2P1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 592W | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | NXH350N100H4Q2F2P1G | |
| Length | 93.1mm | |
| Standards/Approvals | RoHS | |
| Height | 12.3mm | |
| Width | 47.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 592W | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series NXH350N100H4Q2F2P1G | ||
Length 93.1mm | ||
Standards/Approvals RoHS | ||
Height 12.3mm | ||
Width 47.3 mm | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins
The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free and are RoHS Compliant
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