Infineon IKP28N65ES5XKSA1 IGBT Single Transistor IC, 28 A 650 V TO-220

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Subtotal (1 pack of 2 units)*

SGD9.08

(exc. GST)

SGD9.90

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD4.54SGD9.08
10 - 98SGD4.31SGD8.62
100 - 248SGD4.10SGD8.20
250 - 498SGD3.895SGD7.79
500 +SGD3.69SGD7.38

*price indicative

Packaging Options:
RS Stock No.:
242-0980
Mfr. Part No.:
IKP28N65ES5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

28A

Product Type

IGBT Single Transistor IC

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

130W

Package Type

TO-220

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 ±30 V

Maximum Operating Temperature

175°C

Series

5th Generation

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed smooth switching device for hard & soft switching

175°C maximum junction temperature

No need for gate clamping components

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