Infineon FP75R12N2T7BPSA1, Type N-Channel IGBT, 75 A 1.2 kV, 31-Pin Module, Through Hole
- RS Stock No.:
- 232-6719
- Mfr. Part No.:
- FP75R12N2T7BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD160.65
(exc. GST)
SGD175.11
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD160.65 |
| 10 - 19 | SGD157.44 |
| 20 - 29 | SGD154.27 |
| 30 - 39 | SGD151.19 |
| 40 + | SGD148.17 |
*price indicative
- RS Stock No.:
- 232-6719
- Mfr. Part No.:
- FP75R12N2T7BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | Module | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | FP75R12N2T7 | |
| Standards/Approvals | No | |
| Width | 45 mm | |
| Length | 107.5mm | |
| Height | 21.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type Module | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series FP75R12N2T7 | ||
Standards/Approvals No | ||
Width 45 mm | ||
Length 107.5mm | ||
Height 21.3mm | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 75 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Also available with PressFIT technology. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
Related links
- Infineon 75 A 1.2 kV Through Hole
- Infineon 150 A 1.2 kV Through Hole
- Infineon FS150R12N2T7BPSA1 150 A 1.2 kV Through Hole
- Infineon FP75R12N2T7B11BPSA1 75 A 1200 V Chassis
- Infineon 75 A 1200 V Chassis
- Infineon FS75R12KE3GBOSA1 75 A 1.2 kV Through Hole
- Infineon 75 A 1.2 kV Through Hole
- Infineon FP75R12N2T7BPSA2 75 A 1200 V Panel