Infineon FP50R12N2T7B11BPSA1, Type N-Channel IGBT, 50 A 1200 V, 23-Pin Module, Chassis
- RS Stock No.:
- 232-6712
- Mfr. Part No.:
- FP50R12N2T7B11BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD130.42
(exc. GST)
SGD142.16
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 09 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD130.42 |
| 10 - 19 | SGD127.67 |
| 20 - 29 | SGD123.84 |
| 30 - 39 | SGD120.11 |
| 40 + | SGD116.53 |
*price indicative
- RS Stock No.:
- 232-6712
- Mfr. Part No.:
- FP50R12N2T7B11BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | Module | |
| Mount Type | Chassis | |
| Channel Type | Type N | |
| Pin Count | 23 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 45 mm | |
| Length | 107.5mm | |
| Height | 21.3mm | |
| Series | FP50R12N2T7_B11 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type Module | ||
Mount Type Chassis | ||
Channel Type Type N | ||
Pin Count 23 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 45 mm | ||
Length 107.5mm | ||
Height 21.3mm | ||
Series FP50R12N2T7_B11 | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 50 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
Related links
- Infineon FP50R12N2T7B11BPSA1 3 Phase IGBT 23-Pin Module, Chassis Mount
- Infineon FP50R12N2T7BPSA1 3 Phase IGBT 23-Pin Module, Chassis Mount
- Infineon FP35R12N2T7B11BPSA1 3 Phase IGBT 23-Pin Module, Chassis Mount
- Infineon FP75R12N2T7B11BPSA1 3 Phase IGBT 31-Pin Module, Chassis Mount
- Infineon FP200R12N3T7BPSA1 3 Phase IGBT 46-Pin Module, Chassis Mount
- Infineon FP75R12N2T7BPSA1 3 Phase IGBT 31-Pin Module, Chassis Mount
- Infineon FP150R12N3T7BPSA1 3 Phase IGBT 43-Pin Module, Chassis Mount
- Infineon FP100R12N2T7BPSA1 3 Phase IGBT 31-Pin Module, Chassis Mount
