Infineon IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220

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Bulk discount available

Subtotal (1 tube of 50 units)*

SGD151.80

(exc. GST)

SGD165.45

(inc. GST)

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  • 500 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 100SGD3.036SGD151.80
150 - 200SGD2.922SGD146.10
250 +SGD2.74SGD137.00

*price indicative

RS Stock No.:
226-6104
Mfr. Part No.:
IKP39N65ES5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

62 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

188 W

Number of Transistors

1

Configuration

Single

Package Type

PG-TO220

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.45 V at 25°C
4 times Ic pulse current (100°C Tc)
Maximum junction temperature Tvj 175°C

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