STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

SGD172.35

(exc. GST)

SGD187.86

(inc. GST)

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Units
Per unit
Per Tube*
30 - 90SGD5.745SGD172.35
120 - 240SGD5.63SGD168.90
270 - 480SGD5.517SGD165.51
510 - 990SGD5.406SGD162.18
1020 +SGD5.298SGD158.94

*price indicative

RS Stock No.:
206-7211
Mfr. Part No.:
STGWA75H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

115A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

5.1mm

Series

STG

Length

15.9mm

Width

21.1 mm

Automotive Standard

No

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

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