Vishay SI7489DP-T1-E3, Type P-Channel IGBT, 8-Pin PowerPAK SO-8, Surface
- RS Stock No.:
- 180-7802
- Mfr. Part No.:
- SI7489DP-T1-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
SGD20.85
(exc. GST)
SGD22.75
(inc. GST)
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Temporarily out of stock
- 200 unit(s) shipping from 09 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD4.17 | SGD20.85 |
| 50 - 95 | SGD3.96 | SGD19.80 |
| 100 - 495 | SGD3.762 | SGD18.81 |
| 500 - 995 | SGD3.576 | SGD17.88 |
| 1000 + | SGD3.396 | SGD16.98 |
*price indicative
- RS Stock No.:
- 180-7802
- Mfr. Part No.:
- SI7489DP-T1-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 83W | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Channel Type | Type P | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 50 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 6.25mm | |
| Energy Rating | 61mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 83W | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Channel Type Type P | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 50 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 6.25mm | ||
Energy Rating 61mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• New low thermal resistance PowerPAK package with low 1.07mm profile
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET
Applications
• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
Related links
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- Vishay 8-Pin PowerPAK 1212-8, Surface
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay Type P-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8
- Vishay Type P-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SI7489DP-T1-GE3
- Vishay SIA433EDJ-T1-GE3 6-Pin PowerPAK SC-70-6L, Surface
- Vishay 6-Pin PowerPAK SC-70-6L, Surface