Infineon, Type N-Channel IGBT Module, 700 A 1200 V AG-62MM-2, Clamp

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Subtotal (1 tray of 10 units)*

SGD2,484.38

(exc. GST)

SGD2,707.97

(inc. GST)

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10 +SGD248.438SGD2,484.38

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RS Stock No.:
166-1097
Mfr. Part No.:
FZ600R12KS4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

700A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

3900W

Package Type

AG-62MM-2

Mount Type

Clamp

Channel Type

Type N

Switching Speed

0.06μs

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

3.85V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

61.4 mm

Standards/Approvals

RoHS

Length

106.4mm

Series

FZ600R12KS4

Height

36.5mm

Automotive Standard

No

COO (Country of Origin):
HU

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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