Renesas Electronics RJH1CF7RDPQ-80#T2 IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal 4 units (supplied in a tube)*

SGD22.84

(exc. GST)

SGD24.88

(inc. GST)

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Units
Per unit
4 - 8SGD5.71
10 - 48SGD5.19
50 - 98SGD4.76
100 +SGD4.39

*price indicative

Packaging Options:
RS Stock No.:
124-3699P
Mfr. Part No.:
RJH1CF7RDPQ-80#T2
Manufacturer:
Renesas Electronics
COO (Country of Origin):
JP

IGBT Discretes, Renesas Electronics



IGBT Discretes & Modules


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.