Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 110-7783
- Mfr. Part No.:
- IKP15N60TXKSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 05/08/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Pack of 10)
SGD3.558
(exc. GST)
SGD3.878
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 10 | SGD3.558 | SGD35.58 |
| 20 - 40 | SGD3.452 | SGD34.52 |
| 50 - 90 | SGD3.349 | SGD33.49 |
| 100 + | SGD3.249 | SGD32.49 |
| *price indicative | ||
- RS Stock No.:
- 110-7783
- Mfr. Part No.:
- IKP15N60TXKSA1
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 26 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 130 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.36 x 4.57 x 15.95mm |
| Energy Rating | 0.81mJ |
| Minimum Operating Temperature | -40 °C |
| Gate Capacitance | 860pF |
| Maximum Operating Temperature | +175 °C |