ROHM RGT8BM65DGTL1, N-Channel IGBT, 8 A 650 V, 3-Pin TO-252GE, Surface
- RS Stock No.:
- 265-325
- Mfr. Part No.:
- RGT8BM65DGTL1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (10 units, on tapes of 10)*
SGD19.51
(exc. GST)
SGD21.27
(inc. GST)
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In Stock
- 2,490 unit(s) ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD1.951 | SGD19.51 |
| 100 - 240 | SGD1.854 | SGD18.54 |
| 250 + | SGD1.717 | SGD17.17 |
*price indicative
- RS Stock No.:
- 265-325
- Mfr. Part No.:
- RGT8BM65DGTL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 8A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 62W | |
| Package Type | TO-252GE | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | RFN | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 8A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 62W | ||
Package Type TO-252GE | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series RFN | ||
Automotive Standard No | ||
The ROHM IGBT contribute to energy saving high efficiency and a wide range of high voltage and high current applications. The IGBT features a low collector to emitter saturation voltage, making it highly efficient for various applications. It offers a short circuit withstand time of 5 microseconds, ensuring robust performance under fault conditions. Additionally, it is equipped with a built in very fast and soft recovery fast recovery diode from the RFN series.
Low Switching Loss
Pb free lead plating
RoHS compliant
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