Renesas Electronics HIP2210FRTZ-T7A, 3 A, 4 A, 6 → 18V 10-Pin, TDFN

The Renesas 100 V, 3 A source, 4 A sink high-frequency half-bridge NMOS FET driver belongs to HIP2210 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6 V to 18 V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

115 VDC bootstrap supply maximum voltage supports 100 V on the half-bridge
Fast propagation delay and matching : 15ns typical delay, 2 ns typical matching (HIP2211)
Integrated 0.5 Ω typical bootstrap diode
Wide 6 V to 18 V operating voltage range
VDD and boot Undervoltage Lockout (UVLO)

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