Cypress Semiconductor, FM28V020-SG

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 256kbit
Organisation 32k x 8 bit
Interface Type Parallel
Data Bus Width 8bit
Maximum Random Access Time 70ns
Mounting Type Surface Mount
Package Type SOIC
Pin Count 28
Dimensions 18.11 x 7.62 x 2.37mm
Length 18.11mm
Width 7.62mm
Maximum Operating Supply Voltage 3.6 V
Height 2.37mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Automotive Standard AEC-Q100
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2 V
Number of Words 32k
189 In stock for delivery within 4 working days
Price Each (In a Tube of 27)
Was SGD24.274
SGD 18.951
(exc. GST)
SGD 20.278
(inc. GST)
units
Per unit
Per Tube*
27 +
SGD18.951
SGD511.677
*price indicative
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