Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G
- RS Stock No.:
- 124-2990P
- Mfr. Part No.:
- FM25V20A-G
- Manufacturer:
- Infineon
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Subtotal 10 units (supplied in a tube)*
SGD274.00
(exc. GST)
SGD298.70
(inc. GST)
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In Stock
- 218 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 - 24 | SGD27.40 |
| 25 - 99 | SGD26.60 |
| 100 - 499 | SGD25.81 |
| 500 + | SGD25.05 |
*price indicative
- RS Stock No.:
- 124-2990P
- Mfr. Part No.:
- FM25V20A-G
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 2Mbit | |
| Organisation | 256K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 5.33 x 5.33 x 1.78mm | |
| Length | 5.33mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 5.33mm | |
| Height | 1.78mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Number of Words | 256K | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 2Mbit | ||
Organisation 256K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 5.33 x 5.33 x 1.78mm | ||
Length 5.33mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 5.33mm | ||
Height 1.78mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Number of Words 256K | ||
- COO (Country of Origin):
- TH
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.