onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 790-5315
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

This image is representative of the product range

105 In stock for delivery within 4 working days

Price Each (In a Pack of 15)

SGD1.195

(exc. GST)

SGD1.303

(inc. GST)

Units	Per unit	Per Pack*
15 - 15	SGD1.195	SGD17.925
30 - 60	SGD1.171	SGD17.565
75 - 135	SGD1.135	SGD17.025
150 - 285	SGD1.101	SGD16.515
300 +	SGD1.067	SGD16.005

*price indicative

RS Stock No.:: 790-5315
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Datasheet - MJD112-1G
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Width	2.38mm
Maximum Operating Temperature	+150 °C
Height	6.35mm
Length	6.73mm
Dimensions	6.73 x 2.38 x 6.35mm
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

NPN Darlington Transistors, ON Semiconductor

Standards