onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

Bulk discount available

Price Each (In a Tube of 75)

SGD0.453

(exc. GST)

SGD0.494

(inc. GST)

160 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
75 - 75	SGD0.453	SGD33.975
150 - 225	SGD0.447	SGD33.525
300 - 675	SGD0.432	SGD32.40
750 - 1425	SGD0.422	SGD31.65
1500 +	SGD0.349	SGD26.175

**price indicative

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Maximum Operating Temperature	+150 °C
Width	6.22mm
Length	6.73mm
Height	2.38mm
Dimensions	6.73 x 6.22 x 2.38mm
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

NPN Darlington Transistors, ON Semiconductor

Standards

Related links