onsemi NJVMJD44H11T4G Transistor, 8 A NPN, 80 V, 3-Pin DPAK

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Subtotal (1 pack of 5 units)*

SGD7.22

(exc. GST)

SGD7.87

(inc. GST)

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  • 2,150 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5SGD1.444SGD7.22
10 - 20SGD1.308SGD6.54
25 - 45SGD1.298SGD6.49
50 - 95SGD1.282SGD6.41
100 +SGD1.048SGD5.24

*price indicative

Packaging Options:
RS Stock No.:
790-5457
Mfr. Part No.:
NJVMJD44H11T4G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

8A

Maximum Collector Emitter Voltage Vceo

80V

Package Type

TO-252

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

10V dc

Maximum Transition Frequency ft

20MHz

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

40

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

20W

Pin Count

3

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

NJVMJD44H11

Height

2.38mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves ("-1" Suffix)

Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)

Electrically Similar to Popular D44H/D45H Series

Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These Devices are Pb-Free

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