onsemi BC847BPDW1T3G Transistor, 200 mA NPN + PNP, 45 V, 6-Pin SOT-363
- RS Stock No.:
- 186-9370
- Mfr. Part No.:
- BC847BPDW1T3G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD6.75
(exc. GST)
SGD7.35
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 9,950 unit(s) shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | SGD0.135 | SGD6.75 |
| 500 - 950 | SGD0.128 | SGD6.40 |
| 1000 - 2450 | SGD0.121 | SGD6.05 |
| 2500 - 4950 | SGD0.115 | SGD5.75 |
| 5000 + | SGD0.109 | SGD5.45 |
*price indicative
- RS Stock No.:
- 186-9370
- Mfr. Part No.:
- BC847BPDW1T3G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 200mA | |
| Maximum Collector Emitter Voltage Vceo | 45V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum DC Current Gain hFE | 200 | |
| Transistor Polarity | NPN + PNP | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Maximum Power Dissipation Pd | 380mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Series | BC847BPDW1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 200mA | ||
Maximum Collector Emitter Voltage Vceo 45V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum DC Current Gain hFE 200 | ||
Transistor Polarity NPN + PNP | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Maximum Power Dissipation Pd 380mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 2.2mm | ||
Series BC847BPDW1 | ||
Automotive Standard No | ||
The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
Pb-Free Package is Available
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
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