onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS Stock No.:
- 184-4894
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD26.125
(exc. GST)
SGD28.475
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 100 unit(s) shipping from 08 June 2026
- Plus 225 unit(s) shipping from 15 June 2026
- Plus 500 unit(s) shipping from 23 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 50 | SGD1.045 | SGD26.13 |
| 75 - 100 | SGD1.022 | SGD25.55 |
| 125 - 225 | SGD1.00 | SGD25.00 |
| 250 - 350 | SGD0.978 | SGD24.45 |
| 375 + | SGD0.958 | SGD23.95 |
*price indicative
- RS Stock No.:
- 184-4894
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Maximum Power Dissipation Pd | 15W | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 27.1mm | |
| Standards/Approvals | No | |
| Series | MJE200 | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Maximum Power Dissipation Pd 15W | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 27.1mm | ||
Standards/Approvals No | ||
Series MJE200 | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Related links
- onsemi Transistor 40 V, 3-Pin TO-225
- onsemi Transistor 60 V, 3-Pin TO-225
- onsemi Transistor 80 V, 3-Pin TO-225
- onsemi Transistor 100 V, 3-Pin TO-225
- onsemi Transistor 45 V, 3-Pin TO-225
- onsemi Bipolar Transistor 80 V, 3-Pin TO-225
- onsemi PN2222ATFR Transistor 40 V, 3-Pin TO-92
- onsemi BD137G Transistor 60 V, 3-Pin TO-225