Cypress Semiconductor, CY62148ELL-45ZSXI

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages

SRAM (Static Random Access Memory)

Attribute Value
Memory Size 4Mbit
Organisation 512k x 8 bit
Number of Words 512k
Number of Bits per Word 8bit
Maximum Random Access Time 45ns
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 32
Dimensions 21.08 x 10.29 x 1.05mm
Height 1.05mm
Length 21.08mm
Maximum Operating Temperature +85 °C
Maximum Operating Supply Voltage 5.5 V
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 4.5 V
Width 10.29mm
351 In stock for delivery within 3 working days
Price Each (In a Tray of 117)
SGD 9.856
(exc. GST)
SGD 10.546
(inc. GST)
Per unit
Per Tray*
117 - 234
351 - 468
585 - 936
1053 +
*price indicative
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