Cypress Semiconductor SRAM, CY62158ELL-45ZSXI- 8Mbit, 5

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Wide voltage range: 4.5 V–5.5 V
Ultra low active power
Typical active current:1.8 mA at f = 1 MHz
Typical active current: 18 mA at f = fmax
Ultra low standby power
Typical standby current: 2 μA
Maximum standby current: 8 μA
Easy memory expansion with CE1, CE2 and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 44-pin TSOP II package

SRAM (Static Random Access Memory)

Attribute Value
Memory Size 8Mbit
Organisation 1M x 8 bit
Number of Words 1M
Number of Bits per Word 8bit
Maximum Random Access Time 45ns
Address Bus Width 8bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Height 1.04mm
Maximum Operating Temperature -85 °C
Length 18.51mm
Maximum Operating Supply Voltage 5.5 V
Width 10.26mm
Minimum Operating Supply Voltage 4.5 V
Minimum Operating Temperature -40 °C
104 In stock for delivery within 3 working days
Price Each
SGD 17.48
(exc. GST)
SGD 18.70
(inc. GST)
Per unit
1 - 9
10 - 24
25 - 99
100 - 499
500 +
Packaging Options:
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