ON Semi 1200V 77A, Diode, 2-Pin TO-247 FFSH50120A

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
Max Junction Temperature 175 °C
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding

Specifications
Attribute Value
Mounting Type Through Hole
Package Type TO-247
Maximum Continuous Forward Current 77A
Peak Reverse Repetitive Voltage 1200V
Diode Configuration Single
Diode Type SiC Schottky
Pin Count 2
Number of Elements per Chip 1
Diode Technology Schottky
Peak Non-Repetitive Forward Surge Current 1.7kA
390 In stock for delivery within 4 working days
Price Each (In a Tube of 30)
SGD 32.17
(exc. GST)
SGD 34.42
(inc. GST)
units
Per unit
Per Tube*
30 - 120
SGD32.17
SGD965.10
150 +
SGD30.026
SGD900.78
*price indicative
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