onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A
- RS Stock No.:
- 178-4262
- Mfr. Part No.:
- FFSD08120A
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 29/07/2024, delivery within 4 working days from despatch date
Added
Price Each (On a Reel of 2500)
SGD5.146
(exc. GST)
SGD5.609
(inc. GST)
| Units | Per unit | Per Reel* |
| 2500 + | SGD5.146 | SGD12,865.00 |
| *price indicative | ||
- RS Stock No.:
- 178-4262
- Mfr. Part No.:
- FFSD08120A
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Mounting Type | Surface Mount |
| Package Type | TO-252 |
| Maximum Continuous Forward Current | 22.5A |
| Peak Reverse Repetitive Voltage | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Schottky Diode |
| Diode Type | SiC Schottky |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 530A |