The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photo darlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.

Phototransistor output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact package
Daylight filter on sensor
Applications:
Medical Electronics/Devices
Automation
Test and Measurement
Building & Home Control

Select all	Attribute	Value
	Brand	onsemi
	Spectrums Detected	Infrared
	Typical Fall Time	50µs
	Typical Rise Time	10µs
	Number of Channels	1
	Maximum Dark Current	100nA
	Number of Pins	4
	Mounting Type	Through Hole
	Package Type	Custom 4L
	Dimensions	4.39 x 6.1 x 4.65mm
	Collector Current	0.3 (Minimum)mA
	Spectral Range of Sensitivity	940 nm
	Maximum Wavelength Detected	940nm
	Output Signal Type	Phototransistor
	Width	6.1mm
	Height	4.65mm
	Saturation Voltage	0.4V
	Length	4.39mm
	Emitter Collector Voltage	5V
	Collector Emitter Voltage	30V

	Select all
	Brand onsemi
	Spectrums Detected Infrared
	Typical Fall Time 50µs
	Typical Rise Time 10µs
	Number of Channels 1
	Maximum Dark Current 100nA
	Number of Pins 4
	Mounting Type Through Hole
	Package Type Custom 4L
	Dimensions 4.39 x 6.1 x 4.65mm
	Collector Current 0.3 (Minimum)mA
	Spectral Range of Sensitivity 940 nm
	Maximum Wavelength Detected 940nm
	Output Signal Type Phototransistor
	Width 6.1mm
	Height 4.65mm
	Saturation Voltage 0.4V
	Length 4.39mm
	Emitter Collector Voltage 5V
	Collector Emitter Voltage 30V

QRD1113 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package

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