ROHM BS2101F-E2 Dual High and Low Side MOSFET Power Driver 8-Pin, SOP

  • RS Stock No. 184-5238
  • Mfr. Part No. BS2101F-E2
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

Floating Channels for Bootstrap Operation to +600V
Gate drive supply range from 10V to 18V
Built-in Under Voltage Lockout for Both Channels
3.3V and 5.0V Input Logic Compatible
Matched Propagation Delay for Both Channels
Output in phase with input

Specifications
Attribute Value
Number of Drivers 2
Minimum Operating Supply Voltage 10 V
Maximum Operating Supply Voltage 18 V
Topology High and Low Side
Mounting Type Surface Mount
Number of Outputs 2
Polarity Non-Inverting
Package Type SOP
Pin Count 8
Input Logic Compatibility 3.3 V, 5 V
Fall Time 170ns
Minimum Operating Temperature -40 °C
Height 1.5mm
Input Bias Current 40µA
Length 5mm
Dimensions 5 x 4.4 x 1.5mm
Width 4.4mm
Maximum Operating Temperature +125 °C
Rise Time 300ns
10 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
SGD 1.404
(exc. GST)
SGD 1.502
(inc. GST)
units
Per unit
Per Pack*
10 - 40
SGD1.404
SGD14.04
50 - 90
SGD1.332
SGD13.32
100 - 990
SGD1.261
SGD12.61
1000 +
SGD1.189
SGD11.89
*price indicative
Packaging Options: