STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 920-6320
- Mfr. Part No.:
- STGW80V60DF
- Manufacturer:
- STMicroelectronics
570 In stock for delivery within 4 working days
Added
Price Each (In a Tube of 30)
SGD8.427
(exc. GST)
SGD9.185
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | SGD8.427 | SGD252.81 |
| 60 - 90 | SGD8.344 | SGD250.32 |
| 120 - 270 | SGD7.864 | SGD235.92 |
| 300 - 570 | SGD7.442 | SGD223.26 |
| 600 + | SGD7.289 | SGD218.67 |
| *price indicative | ||
- RS Stock No.:
- 920-6320
- Mfr. Part No.:
- STGW80V60DF
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |