Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3P

  • RS Stock No. 891-2756
  • Mfr. Part No. GT60PR21,STA1F(S
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1100 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 333 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.6µs
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Gate Capacitance 2350pF
Maximum Operating Temperature 175 °C
11 Within 3 working day(s) (Global stock)
4 Within 3 working day(s) (Global stock)
Price Each
SGD 4.11
(exc. GST)
SGD 4.40
(inc. GST)
Per unit
1 - 19
20 - 49
50 - 99
100 - 249
250 +
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