STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 877-2905
- Mfr. Part No.:
- STGW30NC60KD
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 27/11/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Pack of 5)
SGD10.506
(exc. GST)
SGD11.452
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 20 | SGD10.506 | SGD52.53 |
| 25 - 95 | SGD10.286 | SGD51.43 |
| 100 - 245 | SGD9.976 | SGD49.88 |
| 250 - 495 | SGD9.678 | SGD48.39 |
| 500 + | SGD9.386 | SGD46.93 |
| *price indicative | ||
- RS Stock No.:
- 877-2905
- Mfr. Part No.:
- STGW30NC60KD
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 200 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 24.45mm |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 2170pF |
| Maximum Operating Temperature | +150 °C |
| Energy Rating | 1435mJ |