STMicroelectronics STGF10NB60SD, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 877-2873
- Mfr. Part No.:
- STGF10NB60SD
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
SGD20.78
(exc. GST)
SGD22.65
(inc. GST)
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In Stock
- Plus 20 unit(s) shipping from 16 February 2026
- Plus 50 unit(s) shipping from 13 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.078 | SGD20.78 |
| 20 - 40 | SGD1.973 | SGD19.73 |
| 50 - 90 | SGD1.874 | SGD18.74 |
| 100 - 190 | SGD1.781 | SGD17.81 |
| 200 + | SGD1.691 | SGD16.91 |
*price indicative
- RS Stock No.:
- 877-2873
- Mfr. Part No.:
- STGF10NB60SD
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 29A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 80W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 3.8μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 30.6mm | |
| Width | 4.6 mm | |
| Series | Low Drop | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| Energy Rating | 8mJ | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 29A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 80W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 3.8μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 30.6mm | ||
Width 4.6 mm | ||
Series Low Drop | ||
Height 10.4mm | ||
Automotive Standard No | ||
Energy Rating 8mJ | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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