STMicroelectronics STGWT30H60DFB, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

SGD11.92

(exc. GST)

SGD13.00

(inc. GST)

Add to Basket
Select or type quantity
Orders below SGD150.00 (exc. GST) cost SGD25.00.
Limited stock
  • 8 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8SGD5.96SGD11.92
10 - 38SGD5.545SGD11.09
40 - 98SGD5.36SGD10.72
100 - 198SGD5.195SGD10.39
200 +SGD4.955SGD9.91

*price indicative

Packaging Options:
RS Stock No.:
860-7325
Mfr. Part No.:
STGWT30H60DFB
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links

Recently viewed