Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 796-5061P
Mfr. Part No.:: GT50JR21
Manufacturer:: Toshiba

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

This image is representative of the product range

Temporarily out of stock - back order for despatch 01/01/2025, delivery within 4 working days from despatch date

Price Each (Supplied in a Tube)

SGD8.11

(exc. GST)

SGD8.84

(inc. GST)

Units	Per unit
10 - 49	SGD8.11
50 - 99	SGD7.58
100 - 249	SGD6.77
250 +	SGD6.56

RS Stock No.:: 796-5061P
Mfr. Part No.:: GT50JR21
Manufacturer:: Toshiba

GT50JR21, Silicon N-Channel IGBT Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Maximum Continuous Collector Current	50 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	230 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	15.5 x 4.5 x 20mm
Maximum Operating Temperature	+175 °C

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

IGBT Discretes, Toshiba