Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Manufacturer:
- Toshiba
Temporarily out of stock - back order for despatch 07/10/2024, delivery within 4 working days from despatch date
Added
Price Each
SGD7.08
(exc. GST)
SGD7.72
(inc. GST)
| Units | Per unit |
| 1 - 9 | SGD7.08 |
| 10 - 49 | SGD6.59 |
| 50 - 99 | SGD6.16 |
| 100 - 249 | SGD5.50 |
| 250 + | SGD5.33 |
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |