- RS Stock No.:
- 756-0559
- Mfr. Part No.:
- GT40T321,Q(O
- Manufacturer:
- Toshiba
Discontinued product
- RS Stock No.:
- 756-0559
- Mfr. Part No.:
- GT40T321,Q(O
- Manufacturer:
- Toshiba
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 1500 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 0.24µs |
Transistor Configuration | Single |
Dimensions | 20 x 15.9 x 4.8mm |
Maximum Operating Temperature | +175 °C |