Toshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65

  • RS Stock No. 756-0540
  • Mfr. Part No. GT40QR21(STA1,E,D
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 230 W
Package Type SC-65
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.2µs
Transistor Configuration Single
Length 20mm
Width 15.5mm
Height 4.5mm
Dimensions 20 x 15.5 x 4.5mm
Maximum Operating Temperature +175 °C
In stock for delivery within 4 working days.
Price Each
SGD 6.13
(exc. GST)
SGD 6.56
(inc. GST)
units
Per unit
1 - 9
SGD6.13
10 - 49
SGD5.02
50 - 99
SGD4.92
100 - 249
SGD4.81
250 +
SGD4.70
Packaging Options:
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