onsemi FGH60N60SMD, Type N-Channel IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole
- RS Stock No.:
- 739-4945
- Mfr. Part No.:
- FGH60N60SMD
- Manufacturer:
- onsemi
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SGD9.79
(exc. GST)
SGD10.67
(inc. GST)
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In Stock
- 189 unit(s) ready to ship from another location
- Plus 416 unit(s) shipping from 25 February 2026
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Units | Per unit |
|---|---|
| 1 - 9 | SGD9.79 |
| 10 - 49 | SGD9.51 |
| 50 - 99 | SGD9.23 |
| 100 - 249 | SGD8.96 |
| 250 + | SGD8.68 |
*price indicative
- RS Stock No.:
- 739-4945
- Mfr. Part No.:
- FGH60N60SMD
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 120A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 600W | |
| Package Type | TO-247AB | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | Field Stop 2nd generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 120A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 600W | ||
Package Type TO-247AB | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series Field Stop 2nd generation | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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