Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

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Subtotal (1 pack of 5 units)*

SGD12.68

(exc. GST)

SGD13.82

(inc. GST)

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  • 2,430 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45SGD2.536SGD12.68
50 - 95SGD2.46SGD12.30
100 - 245SGD2.312SGD11.56
250 - 995SGD2.102SGD10.51
1000 +SGD1.848SGD9.24

*price indicative

Packaging Options:
RS Stock No.:
253-3500
Mfr. Part No.:
BIDD05N60T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

5 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

82 W

Number of Transistors

1

Package Type

TO-252

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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