Bourns BIDD05N60T IGBT 600 V TO-252

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

SGD9.22

(exc. GST)

SGD10.05

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,430 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45SGD1.844SGD9.22
50 - 95SGD1.788SGD8.94
100 - 245SGD1.68SGD8.40
250 - 995SGD1.528SGD7.64
1000 +SGD1.344SGD6.72

*price indicative

Packaging Options:
RS Stock No.:
253-3500
Mfr. Part No.:
BIDD05N60T
Manufacturer:
Bourns
Find similar products by selecting one or more attributes.
Select all

Brand

Bourns

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

82W

Package Type

TO-252

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

BIDD05N60T

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)

Trench-Gate Field-Stop technology

Optimized for conduction

Robust

RoHS compliant

Related links