Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
- RS Stock No.:
- 253-3499
- Mfr. Part No.:
- BIDD05N60T
- Manufacturer:
- Bourns
Temporarily out of stock - back order for despatch 17/09/2024, delivery within 4 working days from despatch date
Added
Price Each (On a Reel of 2500)
SGD1.017
(exc. GST)
SGD1.109
(inc. GST)
| Units | Per unit | Per Reel* |
| 2500 + | SGD1.017 | SGD2,542.50 |
| *price indicative | ||
- RS Stock No.:
- 253-3499
- Mfr. Part No.:
- BIDD05N60T
- Manufacturer:
- Bourns
Technical data sheets
Legislation and Compliance
Product Details
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 5 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 82 W |
| Package Type | TO-252 |
| Configuration | Single Diode |