STMicroelectronics STGYA50M120DF3 IGBT, 50 A 1200 V, 3-Pin, Through Hole

RS Stock No.:: 248-4896
Mfr. Part No.:: STGYA50M120DF3
Manufacturer:: STMicroelectronics

STMicroelectronics STGYA50M120DF3 IGBT, 50 A 1200 V, 3-Pin, Through Hole

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

SGD11.57

(exc. GST)

SGD12.61

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit
1 - 1	SGD11.57
2 - 4	SGD11.22
5 - 9	SGD10.78
10 - 14	SGD10.23
15 +	SGD9.61

*price indicative

RS Stock No.:: 248-4896
Mfr. Part No.:: STGYA50M120DF3
Manufacturer:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	50A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	535W
	Mount Type	Through Hole
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.7V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	21.1 mm
	Standards/Approvals	RoHS
	Length	15.9mm
	Series	STGYA50M120DF3
	Height	5.1mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 50A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 535W
	Mount Type Through Hole
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.7V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 21.1 mm
	Standards/Approvals RoHS
	Length 15.9mm
	Series STGYA50M120DF3
	Height 5.1mm
	Automotive Standard No

Datasheet - STGYA50M120DF3

The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature of 175 degree C

10 μs of short circuit withstand time

Low VCEsat

Tight parameter distribution

Positive VCEsat temperature coefficient

Low thermal resistance

Soft and fast recovery antiparallel diode

STMicroelectronics STGYA50M120DF3 IGBT, 50 A 1200 V, 3-Pin, Through Hole

Related links