STMicroelectronics STGWA30IH65DF, Type N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole

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SGD30.63

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SGD33.385

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5 - 5SGD6.126SGD30.63
10 +SGD6.006SGD30.03

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Packaging Options:
RS Stock No.:
206-8630
Mfr. Part No.:
STGWA30IH65DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

108W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Operating Temperature

175°C

Width

21.1 mm

Length

15.9mm

Height

5.1mm

Standards/Approvals

RoHS

Series

STG

Automotive Standard

No

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only

Maximum junction temperature: TJ = 175 °C

VCE(sat) = 1.55 V (typ.) @ IC = 30 A

Minimized tail current

Tight parameter distribution

Low thermal resistance

Low drop voltage freewheeling co-packaged diode

Positive VCE(sat) temperature coefficient

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