STMicroelectronics STGWA20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 206-7209
- Mfr. Part No.:
- STGWA20H65DFB2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD84.45
(exc. GST)
SGD92.04
(inc. GST)
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Temporarily out of stock
- 30 unit(s) shipping from 12 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | SGD2.815 | SGD84.45 |
| 120 - 240 | SGD2.758 | SGD82.74 |
| 270 - 480 | SGD2.703 | SGD81.09 |
| 510 - 990 | SGD2.649 | SGD79.47 |
| 1020 + | SGD2.596 | SGD77.88 |
*price indicative
- RS Stock No.:
- 206-7209
- Mfr. Part No.:
- STGWA20H65DFB2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 147W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench Gate Field Stop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 147W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench Gate Field Stop | ||
Automotive Standard No | ||
The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Related links
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