STMicroelectronics, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 202-5515P
- Mfr. Part No.:
- STGWA30HP65FB
- Manufacturer:
- STMicroelectronics
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Subtotal 10 units (supplied in a tube)*
SGD48.64
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SGD53.02
(inc. GST)
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- 5 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 + | SGD4.864 |
*price indicative
- RS Stock No.:
- 202-5515P
- Mfr. Part No.:
- STGWA30HP65FB
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Series | STG | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Series STG | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode