STMicroelectronics STGWA30HP65FB2, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247 LL, Through Hole
- RS Stock No.:
- 201-4418
- Mfr. Part No.:
- STGWA30HP65FB2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD21.38
(exc. GST)
SGD23.305
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 420 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD4.276 | SGD21.38 |
| 15 - 20 | SGD4.114 | SGD20.57 |
| 25 + | SGD3.86 | SGD19.30 |
*price indicative
- RS Stock No.:
- 201-4418
- Mfr. Part No.:
- STGWA30HP65FB2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-247 LL | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Series | STG | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-247 LL | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Series STG | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Automotive Standard No | ||
The STMicroelectronics trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package, has a positive VCE(sat) temperature coefficient.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Related links
- STMicroelectronics 50 A 650 V Through Hole
- STMicroelectronics 50 A 650 V Through Hole
- STMicroelectronics STGWA30H65DFB2 50 A 650 V Through Hole
- STMicroelectronics STGWA30M65DF2AG IGBT 3-Pin TO-247 LL, Through Hole
- Infineon 50 A 650 V Through Hole
- onsemi 50 A 650 V Through Hole
- onsemi AFGHL50T65SQ 50 A 650 V Through Hole
- Infineon IKWH50N65WR6XKSA1 50 A 650 V Through Hole