STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 168-8686
- Mfr. Part No.:
- STGWT60H65DFB
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 08/05/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Tube of 30)
SGD6.227
(exc. GST)
SGD6.787
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 60 | SGD6.227 | SGD186.81 |
| 90 - 120 | SGD5.994 | SGD179.82 |
| 150 + | SGD5.619 | SGD168.57 |
| *price indicative | ||
- RS Stock No.:
- 168-8686
- Mfr. Part No.:
- STGWT60H65DFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |