IXYS, Type N-Channel IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 168-4775
- Mfr. Part No.:
- IXA12IF1200HB
- Manufacturer:
- IXYS
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 168-4775
- Mfr. Part No.:
- IXA12IF1200HB
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 85W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 125°C | |
| Series | Planar | |
| Length | 20.3mm | |
| Standards/Approvals | IEC 60747, RoHS, Epoxy meets UL 94V-0 | |
| Height | 5.3mm | |
| Width | 16.24 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 85W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 125°C | ||
Series Planar | ||
Length 20.3mm | ||
Standards/Approvals IEC 60747, RoHS, Epoxy meets UL 94V-0 | ||
Height 5.3mm | ||
Width 16.24 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- IXYS IXA12IF1200HB IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH30N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH82N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH50N120C3D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH50N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH20N120C3 IGBT 3-Pin TO-247, Through Hole
- IXYS IXA45IF1200HB IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH40N120C3 IGBT 3-Pin TO-247, Through Hole